Delft University of Technology shines light on atomic transistor
Researchers from TU Delft and FOM Foundation have successfully measured transport through a single atom in a transistor. This research offers new insights into the behavior of so-called dopant atoms in silicon. The researchers are able to measure and manipulate a single dopant atom in a realistic semi-conducting environment. The individual behavior of dopant atoms is a stumbling block to the further miniaturisation of electronics. The work is published in Physical Review Letters.